BSM35GD120DN2E3224BOSA1

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Manufacturer part number:BSM35GD120DN2E3224BOSA1

Manufacturer:Infineon Technologies

Description:BSM35GD120DN2E3224BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSM35GD120DN2E3224BOSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Chassis Mount
Package / Case	Module
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	17
ECCN Code	EAR99
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	17
JESD-30 Code	R-XUFM-X17
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	280W
Polarity/Channel Type	N-CHANNEL
Input	Standard
Current - Collector Cutoff (Max)	1mA
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	50A
Turn On Time	120 ns
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 35A
Turn Off Time-Nom (toff)	450 ns
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	2nF @ 25V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
10	$99.73700	$997.37

BSM35GD120DN2E3224BOSA1 Description

BSM35GD120DN2E3224BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes BSM35GD120DN2E3224BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

BSM35GD120DN2E3224BOSA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

BSM35GD120DN2E3224BOSA1 Applications

ISM applications

DC large signal applications

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