BSM75GP60BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM75GP60BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
24
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
24
JESD-30 Code
R-XUFM-X24
Qualification Status
Not Qualified
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
310W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Three Phase Bridge Rectifier
Current - Collector Cutoff (Max)
500μA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
100A
Turn On Time
140 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 75A
Turn Off Time-Nom (toff)
400 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
3.3nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$144.23600
$1442.36
BSM75GP60BOSA1 Product Details
BSM75GP60BOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.