BSP51H6327XTSA1 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 500mA 10V.The collector emitter saturation voltage is 1.8V, giving you a wide variety of design options.A VCE saturation (Max) of 1.8V @ 1mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.200MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BSP51H6327XTSA1 Features

the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

BSP51H6327XTSA1 Applications

There are a lot of Infineon Technologies BSP51H6327XTSA1 applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface