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D251N14BXPSA1

D251N14BXPSA1

D251N14BXPSA1

Infineon Technologies

DIODE GEN PURP 1.4KV 255A

SOT-23

D251N14BXPSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Stud
Mounting Type Stud Mount
Package / Case DO-205AA, DO-8, Stud
Number of Pins 2
PackagingBulk
Published 2006
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Max Operating Temperature180°C
Min Operating Temperature -40°C
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element ConfigurationSingle
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 30mA @ 1400V
Operating Temperature - Junction -40°C~180°C
Max Surge Current6.3kA
Halogen Free Halogen Free
Voltage - DC Reverse (Vr) (Max) 1400V
Current - Average Rectified (Io) 255A
Peak Reverse Current30mA
Max Repetitive Reverse Voltage (Vrrm) 1.4kV
Peak Non-Repetitive Surge Current 6.3kA
Reverse Voltage1.4kV
Max Forward Surge Current (Ifsm) 5.3kA
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1500 items

About D251N14BXPSA1

The D251N14BXPSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 1.4KV 255A.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the D251N14BXPSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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