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D3501N42TXPSA1

D3501N42TXPSA1

D3501N42TXPSA1

Infineon Technologies

DIODE GEN PURP 4.2KV 4870A

SOT-23

D3501N42TXPSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 36 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case DO-200AE
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 160°C
Min Operating Temperature -40°C
HTS Code 8541.10.00.80
Terminal Position END
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 100mA @ 4200V
Voltage - Forward (Vf) (Max) @ If 1.27V @ 4000A
Forward Current 5.3kA
Operating Temperature - Junction -40°C~160°C
Output Current-Max 4870A
Application GENERAL PURPOSE
Halogen Free Halogen Free
Voltage - DC Reverse (Vr) (Max) 4200V
Current - Average Rectified (Io) 4870A
Number of Phases 1
Peak Reverse Current 200mA
Max Repetitive Reverse Voltage (Vrrm) 4.2kV
Peak Non-Repetitive Surge Current 63kA
Max Forward Surge Current (Ifsm) 56kA
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price

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