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D711N65TXPSA1

D711N65TXPSA1

D711N65TXPSA1

Infineon Technologies

DIODE GEN PURP 6.5KV 1070A

SOT-23

D711N65TXPSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 36 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case DO-200AB, B-PUK
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 160°C
Min Operating Temperature -40°C
HTS Code 8541.10.00.80
Terminal Position END
Number of Elements 1
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 50mA @ 6500V
Voltage - Forward (Vf) (Max) @ If 1.9V @ 1200A
Forward Current 1.05kA
Operating Temperature - Junction -40°C~160°C
Max Surge Current 12.5kA
Output Current-Max 1050A
Application GENERAL PURPOSE
Halogen Free Halogen Free
Voltage - DC Reverse (Vr) (Max) 6500V
Current - Average Rectified (Io) 1070A
Number of Phases 1
Peak Reverse Current 50mA
Max Repetitive Reverse Voltage (Vrrm) 6.5kV
Peak Non-Repetitive Surge Current 10.5kA
Reverse Voltage 5.6kV
Max Forward Surge Current (Ifsm) 10.5kA
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $467.88000 $467.88

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