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D850N30TXPSA1

D850N30TXPSA1

D850N30TXPSA1

Infineon Technologies

DIODE GEN PURP 3KV 850A

SOT-23

D850N30TXPSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case DO-200AB, B-PUK
PackagingBulk
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 50mA @ 3000V
Voltage - Forward (Vf) (Max) @ If 1.28V @ 850A
Operating Temperature - Junction -40°C~160°C
Voltage - DC Reverse (Vr) (Max) 3000V
Current - Average Rectified (Io) 850A
In-Stock:1365 items

About D850N30TXPSA1

The D850N30TXPSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 3KV 850A.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the D850N30TXPSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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