DD1200S12H4HOSA1                        Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

DD1200S12H4HOSA1                        Applications

·High power converters

·Motor drives

·Multi level inverter

·Wind turbines

DD1200S12H4HOSA1                        Features

·Extended operating temperature Tvjop

Mechanical Features·4 kV AC 1min insulation

·Package with CTI>400

·High power density

·IHM B housing