DDB6U134N16RRB11BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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DDB6U134N16RRB11BPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Surface Mount
NO
Transistor Element Material
SILICON
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
19
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X19
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Current-Max (IC)
70A
Collector-Emitter Voltage-Max
1200V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$74.24700
$742.47
DDB6U134N16RRB11BPSA1 Product Details
DDB6U134N16RRB11BPSA1 Description
The DDB6U134N16RRB11BPSA1 is an EconoPACK™2 module with Low Loss IGBT2 and Emitter Controlled diode and PressFIT/NTC. The abbreviated version of insulated-gate bipolar transistor is IGBT, which is a power semiconductor die. A grouping of numerous IGBT power semiconductor dies in one physical package is known as an IGBT power module.