DDB6U134N16RRBOSA1                                    Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

DDB6U134N16RRBOSA1                                    Applications

· Industrial Motor Drive

· Uninterruptible Power Supply

· Welding and Cutting Machine

· Switched Mode Power Supply

· Induction Heating

DDB6U134N16RRBOSA1                                    Features

 Available in 5-V, 4.85-V, and 3.3-V

Fixed-Output and Adjustable Versions

 Very Low-Dropout Voltage ...Maximum of

32 mV at IO = 100 mA (TPS71H50)

 Very Low Quiescent Current – Independent

of Load . . . 285 μA Typ

 Extremely Low Sleep-State Current

0.5 μA Max

 2% Tolerance Over Specified Conditions

For Fixed-Output Versions