DF200R12W1H3FB11BOMA1

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DF200R12W1H3FB11BOMA1

Manufacturer part number:DF200R12W1H3FB11BOMA1

Manufacturer:Infineon Technologies

Description:DF200R12W1H3FB11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:DF200R12W1H3FB11BOMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Mounting Type	Chassis Mount
Package / Case	Module
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C
Published	2002
Series	EasyPACK™
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	18
ECCN Code	EAR99
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XUFM-X18
Number of Elements	2
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	20mW
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Current - Collector Cutoff (Max)	1mA
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	30A
Turn On Time	27 ns
Vce(on) (Max) @ Vge, Ic	1.45V @ 15V, 30A
Turn Off Time-Nom (toff)	475 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	6.15nF @ 25V
RoHS Status	ROHS3 Compliant