FB10R06KL4BOMA1 Description

The FB10R06KL4BOMA1 is a highly insulated module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.

FB10R06KL4BOMA1 Features

Electrical Features

• Low VCEsat

Mechanical Features

• Package with enhanced insulation of 10.4kV AC 10s

• High creepage and clearance distances

• Package with CTI > 600

• AlSiC base plate for increased thermal cycling capability

• Extended storage temperature down to Tstg = -55°C

FB10R06KL4BOMA1 Applications

• Traction drives

• Medium voltage converters

• As a switch