FD-DF80R12W1H3_B52 Description

FD-DF80R12W1H3_B52 is a single IGBT with a Collector Emitter Breakdown Voltage of 1200V from Infineon Technologies. FD-DF80R12W1H3_B52 operates between -40°C~125°C, and its Current - Collector (Ic) (Max) is 40A. The FD-DF80R12W1H3_B52 has 3 pins and it is available in Module packaging way. FD-DF80R12W1H3_B52 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

FD-DF80R12W1H3_B52 Features

• Increased blocking voltage capability to 650V

• High Speed IGBT H3

• Low Inductive Design

• Low VCEsat

FD-DF80R12W1H3_B52 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial