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FD401R17KF6C_B2

FD401R17KF6C_B2

FD401R17KF6C_B2

Infineon Technologies

FD401R17KF6C_B2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FD401R17KF6C_B2 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 40 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 73
Operating Temperature -40°C~125°C
Published 2014
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN LEAD
Configuration Single Chopper
Element Configuration Single
Power Dissipation 3.1kW
Power - Max 3150W
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 650A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Saturation Voltage 2.6V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 400A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 27nF @ 25V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
4 $750.92500 $3003.7
FD401R17KF6C_B2 Product Details

FD401R17KF6C_B2 Description


FD401R17KF6C_B2 is a 1700v IGBT. The Infineon FD401R17KF6C_B2 can be applied in  Automotive, Advanced driver assistance systems (ADAS), Industrial, Industrial transport (non-car & non-light truck), Enterprise systems, Datacenter & enterprise computing applications due to the following features. The Operating and Storage Temperature Range is between -45 and 125℃. And the transistor FD401R17KF6C_B2 is in the IHM package with 3kW power dissipation.



FD401R17KF6C_B2 Features


Gate-emitter peak voltage: ±20v

Internal gate resistor: 2Ω

Collector-emitter cut-off current: 5mA

Continuous DC forward current: 400A

The temperature under switching conditions



FD401R17KF6C_B2 Applications


Automotive 

Advanced driver assistance systems (ADAS) 

Industrial 

Industrial transport (non-car & non-light truck) 

Enterprise systems 

Datacenter & enterprise computing


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