FF1400R17IP4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF1400R17IP4BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
50 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
12
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Series
PrimePACK™3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
12
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
12
Qualification Status
Not Qualified
Number of Elements
2
Configuration
2 Independent
Element Configuration
Dual
Power Dissipation
9.55kW
Case Connection
ISOLATED
Power - Max
955000W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.7kV
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
1400A
Collector Emitter Saturation Voltage
2.2V
Turn On Time
1030 ns
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 1400A
Turn Off Time-Nom (toff)
2190 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
110nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$468.824272
$468.824272
10
$442.287049
$4422.87049
100
$417.251933
$41725.1933
500
$393.633899
$196816.9495
1000
$371.352735
$371352.735
FF1400R17IP4BOSA1 Product Details
FF1400R17IP4BOSA1 Description
The FF1400R17IP4BOSA1 is a PrimePACK?3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC. Power may be turned on and off quickly and with excellent energy efficiency using an IGBT power module, which serves as a switch. Due to its capacity to improve switching, temperature, weight, and cost performance, IGBT power modules are increasingly used as the preferred technology for high-power applications.