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FF600R12ME4EB11BOSA1

FF600R12ME4EB11BOSA1

FF600R12ME4EB11BOSA1

Infineon Technologies

FF600R12ME4EB11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF600R12ME4EB11BOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X12
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 4050W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 995A
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A
Turn Off Time-Nom (toff) 700 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 37nF @ 25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $242.96000 $242.96
12 $232.69083 $2792.28996
FF600R12ME4EB11BOSA1 Product Details

FF600R12ME4EB11BOSA1 Description


The FF600R12ME4EB11BOSA1 is an EconoDUAL?3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and Press FIT/NTC.



FF600R12ME4EB11BOSA1 Features


  • Low Vcesat

  • Tvj op= 150°C

  • VcEsat with a positive temperature coefficient

  • High power density

  • Isolated base plate

  • PressFIT contact technology

  • Standard housing



FF600R12ME4EB11BOSA1 Applications


  • Auxiliary inverters

  • Motor drives

  • Solar applications

  • UPS systems


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