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FP100R06KE3_B16

FP100R06KE3_B16

FP100R06KE3_B16

Infineon Technologies

FP100R06KE3_B16 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FP100R06KE3_B16 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $139.882698 $139.882698
10 $131.964809 $1319.64809
100 $124.495103 $12449.5103
500 $117.448211 $58724.1055
1000 $110.800199 $110800.199
FP100R06KE3_B16 Product Details

FP100R06KE3_B16 Description


FP100R06KE3_B16 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FP100R06KE3_B16 operates between -40°C~125°C TJ, and its Current - Collector Cutoff (Max) is 105A. The FP100R06KE3_B16 has 35 pins and it is available in Module packaging way. FP100R06KE3_B16 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



FP100R06KE3_B16 Features


  • Operating Temperature: -40°C~150°C TJ

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A

  • Input Capacitance (Cies) @ Vce: 37nF @ 25V

  • Transistor Application: POWER CONTROL



FP100R06KE3_B16 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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