FP30R06KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP30R06KE3BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
24
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
24
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
24
Qualification Status
Not Qualified
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
125W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
37A
Current - Collector Cutoff (Max)
1mA
Current - Collector (Ic) (Max)
37A
Turn On Time
170 ns
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
Turn Off Time-Nom (toff)
750 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
1.65nF @ 25V
Height
17mm
Length
107.5mm
Width
45mm
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$64.472414
$64.472414
10
$60.823032
$608.23032
100
$57.380219
$5738.0219
500
$54.132282
$27066.141
1000
$51.068190
$51068.19
FP30R06KE3BOSA1 Product Details
FP30R06KE3BOSA1 Description
FP30R06KE3BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FP30R06KE3BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.