FP40R12KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP40R12KE3BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Number of Pins
24
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2013
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
24
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
24
Qualification Status
Not Qualified
Number of Elements
7
Polarity
NPN
Configuration
Three Phase Inverter
Power Dissipation
200W
Case Connection
ISOLATED
Power - Max
210W
Forward Current
40A
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
55A
Turn On Time
140 ns
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 40A
Turn Off Time-Nom (toff)
610 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
2.5nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$81.68700
$816.87
FP40R12KE3BOSA1 Product Details
FP40R12KE3BOSA1 Description
FP40R12KE3BOSA1 is a 1200v IGBT-Modules. The FP40R12KE3BOSA1 can be applied in Automotive, Body electronics & lighting, Industrial, Electronic point of sale (EPOS), Personal electronics, and Gaming applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP40R12KE3BOSA1 is in the tray package with 165W Power dissipation.
FP40R12KE3BOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 55A