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FP40R12KE3BOSA1

FP40R12KE3BOSA1

FP40R12KE3BOSA1

Infineon Technologies

FP40R12KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FP40R12KE3BOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Number of Pins 24
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2013
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 24
ECCN Code EAR99
Terminal Position UPPER
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 24
Qualification Status Not Qualified
Number of Elements 7
Polarity NPN
Configuration Three Phase Inverter
Power Dissipation 200W
Case Connection ISOLATED
Power - Max 210W
Forward Current 40A
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 55A
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2.5nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
10 $81.68700 $816.87
FP40R12KE3BOSA1 Product Details

FP40R12KE3BOSA1 Description


FP40R12KE3BOSA1 is a 1200v IGBT-Modules. The FP40R12KE3BOSA1 can be applied in Automotive, Body electronics & lighting, Industrial, Electronic point of sale (EPOS), Personal electronics, and Gaming applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP40R12KE3BOSA1 is in the tray package with 165W Power dissipation.



FP40R12KE3BOSA1 Features


Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 55A

Repetitive peak collector current Tp = 1 ms: 80A

Total power dissipation Tc = 25°C: 210W

Gate-emitter peak voltage: ±20V



FP40R12KE3BOSA1 Applications


Automotive 

Body electronics & lighting 

Industrial 

Electronic point of sale (EPOS) 

Personal electronics 

Gaming


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