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FP75R12N2T4PBPSA1

FP75R12N2T4PBPSA1

FP75R12N2T4PBPSA1

Infineon Technologies

FP75R12N2T4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FP75R12N2T4PBPSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $219.888207 $219.888207
10 $212.657840 $2126.5784
25 $211.179583 $5279.489575
50 $209.711602 $10485.5801
100 $205.398239 $20539.8239
500 $190.713314 $95356.657
FP75R12N2T4PBPSA1 Product Details

FP75R12N2T4PBPSA1 Description

 

FP75R12N2T4PBPSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FP75R12N2T4PBPSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FP75R12N2T4PBPSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FP75R12N2T4PBPSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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