FS100R12KE3_B3 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS100R12KE3_B3 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
32
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Published
2012
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
34
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
34
JESD-30 Code
R-XUFM-X34
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
480W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
140A
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Power Dissipation-Max (Abs)
480W
Turn On Time
340 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 100A
Turn Off Time-Nom (toff)
610 ns
IGBT Type
NPT
NTC Thermistor
No
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
7.1nF @ 25V
VCEsat-Max
2.15 V
RoHS Status
RoHS Compliant
FS100R12KE3_B3 Product Details
FS100R12KE3_B3 Description
FS100R12KE3_B3 is an N-Channel IGBT Module transistor from the manufacturer of Infineon Technologies with a voltage of 1200V. The operating temperature of FS100R12KE3_B3 is 150°C TJ and its maximum power dissipation is 480W. MPF102 has 32 pins and it is available in Module packaging way. Pb?Free Package is Available and the storage temperature of MPF102 is ?65 to +150°C.