FS100R12N2T4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FS100R12N2T4PBPSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$138.54100
$1385.41
FS100R12N2T4PBPSA1 Product Details
FS100R12N2T4PBPSA1 Description
FS100R12N2T4PBPSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FS100R12N2T4PBPSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 65A. The FS100R12N2T4PBPSA1 has 18 pins and it is available in Module packaging way. FS100R12N2T4PBPSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FS100R12N2T4PBPSA1 Features
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max): 1200V