FZ1200R33KF2CB3S2NDSA1 Description

FZ1200R33KF2CB3S2NDSA1 is a 3300v IGBT-Modules. The FZ1200R33KF2CB3S2NDSA1 can be applied in  Automotive, Infotainment & cluster, Communications equipment, Broadband fixed line access, Personal electronics, and Connected peripherals & printers applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FZ1200R33KF2CB3S2NDSA1 is in the tray package with 14kW Power dissipation.

FZ1200R33KF2CB3S2NDSA1 Features

Collector-emitter voltage Tvj = 25°C: 1600v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 45A

Repetitive peak collector current Tp = 1 ms: 50A

Total power dissipation Tc = 25°C, Tvj max = 150: 230W

Gate-emitter peak voltage: ±20V

FZ1200R33KF2CB3S2NDSA1 Applications

Automotive 

Infotainment & cluster 

Communications equipment 

Broadband fixed line access 

Personal electronics 

Connected peripherals & printers