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FZ1200R33KF2CNOSA2

FZ1200R33KF2CNOSA2

FZ1200R33KF2CNOSA2

Infineon Technologies

FZ1200R33KF2CNOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

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FZ1200R33KF2CNOSA2 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~125°C
Part Status Last Time Buy
Configuration Full Bridge
Power - Max 14500W
Input Standard
Current - Collector Cutoff (Max) 12mA
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 2000A
Vce(on) (Max) @ Vge, Ic 4.25V @ 15V, 1.2kA
NTC Thermistor No
Input Capacitance (Cies) @ Vce 150nF @ 25V
FZ1200R33KF2CNOSA2 Product Details

FZ1200R33KF2CNOSA2 Description


FZ1200R33KF2CNOSA2 is a 3300v IGBT-Modules. The FZ1200R33KF2CNOSA2 can be applied in   Automotive, Hybrid, electric & powertrain systems, Communications equipment, Broadband fixed line access, Enterprise systems, and Enterprise machine applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FZ1200R33KF2CNOSA2 is in the tray package with 14.5kW Power dissipation.



FZ1200R33KF2CNOSA2 Features


Collector-emitter voltage Tvj = 25°C: 3300v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 2000A

Repetitive peak collector current Tp = 1 ms: 2400A

Total power dissipation Tc = 25°C: 14.5kW

Gate-emitter peak voltage: ±20V



FZ1200R33KF2CNOSA2 Applications


Automotive 

Hybrid, electric & powertrain systems 

Communications equipment 

Broadband fixed line access 

Enterprise systems 

Enterprise machine


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