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FZ1200R33KL2CNOSA1

FZ1200R33KL2CNOSA1

FZ1200R33KL2CNOSA1

Infineon Technologies

FZ1200R33KL2CNOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

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FZ1200R33KL2CNOSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2013
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 9
JESD-30 Code R-XUFM-X9
Number of Elements 3
Configuration COMPLEX
Case Connection ISOLATED
Power - Max 14500W
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 2300A
Power Dissipation-Max (Abs) 14500W
Turn On Time 1700 ns
Vce(on) (Max) @ Vge, Ic 3.65V @ 15V, 1200A
Turn Off Time-Nom (toff) 4250 ns
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 145nF @ 25V
VCEsat-Max 3.65 V
RoHS Status Non-RoHS Compliant
FZ1200R33KL2CNOSA1 Product Details

FZ1200R33KL2CNOSA1 Description


FZ1200R33KL2CNOSA1 developed by Infineon Technologies is a type of  IGBT module which is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.



FZ1200R33KL2CNOSA1 Features


Energy saving

Convenient installation

Convenient maintenance

Stable heat dissipation



FZ1200R33KL2CNOSA1 Applications


Rail transit

Smart grid

Aerospace

Electric vehicles 

New energy equipment


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