FZ1200R33KL2CNOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ1200R33KL2CNOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C TJ
Published
2013
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
9
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
9
JESD-30 Code
R-XUFM-X9
Number of Elements
3
Configuration
COMPLEX
Case Connection
ISOLATED
Power - Max
14500W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
3300V
Current - Collector (Ic) (Max)
2300A
Power Dissipation-Max (Abs)
14500W
Turn On Time
1700 ns
Vce(on) (Max) @ Vge, Ic
3.65V @ 15V, 1200A
Turn Off Time-Nom (toff)
4250 ns
NTC Thermistor
No
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
145nF @ 25V
VCEsat-Max
3.65 V
RoHS Status
Non-RoHS Compliant
FZ1200R33KL2CNOSA1 Product Details
FZ1200R33KL2CNOSA1 Description
FZ1200R33KL2CNOSA1 developed by Infineon Technologies is a type of IGBT module which is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.