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FZ800R33KF2CB3S2NDSA1

FZ800R33KF2CB3S2NDSA1

FZ800R33KF2CB3S2NDSA1

Infineon Technologies

FZ800R33KF2CB3S2NDSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FZ800R33KF2CB3S2NDSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~125°C
Part Status Last Time Buy
Configuration Half Bridge
Power - Max 9600W
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 1A
Vce(on) (Max) @ Vge, Ic 4.25V @ 15V, 800A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 100nF @ 25V
FZ800R33KF2CB3S2NDSA1 Product Details

FZ800R33KF2CB3S2NDSA1                        Description


The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

 



FZ800R33KF2CB3S2NDSA1                         Applications

 Motor Drives

·Resonant Inverter Appliccations

Traction Drives

UPS Systems

·Wind Turbines

 

FZ800R33KF2CB3S2NDSA1                        Features

·Extended Operation Temperature Tyjop

·High DC Stability

High Short Circuit CapabilitySelf Limiting Short Circuit Current

Low Switching Losses

Unbeatable Robustness

·VcEsatwith positive Temperature Coefficient

 

Mechanical Features

·4 kV AC 1min Insulation

·Package with CTI>400

·High Creepage and Clearance Distances

·High Power and Thermal Cycling Capability

·High Power Density

·Substrate for Low Thermal Resistance

 



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