FZ800R33KF2CB3S2NDSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ800R33KF2CB3S2NDSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~125°C
Part Status
Last Time Buy
Configuration
Half Bridge
Power - Max
9600W
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
3300V
Current - Collector (Ic) (Max)
1A
Vce(on) (Max) @ Vge, Ic
4.25V @ 15V, 800A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
100nF @ 25V
FZ800R33KF2CB3S2NDSA1 Product Details
FZ800R33KF2CB3S2NDSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
FZ800R33KF2CB3S2NDSA1 Applications
Motor Drives
·Resonant Inverter Appliccations
Traction Drives
UPS Systems
·Wind Turbines
FZ800R33KF2CB3S2NDSA1 Features
·Extended Operation Temperature Tyjop
·High DC Stability
High Short Circuit CapabilitySelf Limiting Short Circuit Current