FZ800R33KF2CNOSA2

join

new-10%

Manufacturer part number:FZ800R33KF2CNOSA2

Manufacturer:Infineon Technologies

Description:FZ800R33KF2CNOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:FZ800R33KF2CNOSA2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Chassis Mount
Package / Case	Module
Operating Temperature	-40°C~125°C
Part Status	Last Time Buy
Configuration	Half Bridge
Power - Max	9600W
Input	Standard
Current - Collector Cutoff (Max)	5mA
Voltage - Collector Emitter Breakdown (Max)	3300V
Current - Collector (Ic) (Max)	1A
Vce(on) (Max) @ Vge, Ic	4.25V @ 15V, 800A
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	100nF @ 25V

FZ800R33KF2CNOSA2 Description

FZ800R33KF2CNOSA2 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FZ800R33KF2CNOSA2 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FZ800R33KF2CNOSA2 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FZ800R33KF2CNOSA2 Applications

ISM applications

DC large signal applications

Power factor correction