IDH08G65C5XKSA2 Description
IDH08G65C5XKSA2 represents Infineon's leading-edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thing!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
IDH08G65C5XKSA2 Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature-independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 18 mA2)
Optimized for high-temperature operation
IDH08G65C5XKSA2 Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
