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IDWD30G120C5XKSA1

  • IDWD30G120C5XKSA1
  • IDWD30G120C5XKSA1

IDWD30G120C5XKSA1

IDWD30G120C5XKSA1

Infineon Technologies

1200 V Silicion Carbide Schottky diode in TO-247-2 package

SOT-23

IDWD30G120C5XKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-2
Series CoolSiC™+
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 248μA @ 1200V
Voltage - Forward (Vf) (Max) @ If 1.65V @ 30A
Operating Temperature - Junction -55°C~175°C
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 87A DC
Reverse Recovery Time 0ns
Capacitance @ Vr, F 1980pF @ 1V 1MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $19.037654 $19.037654
10 $17.960051 $179.60051
100 $16.943445 $1694.3445
500 $15.984382 $7992.191
1000 $15.079605 $15079.605

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