IFF600B12ME4B11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IFF600B12ME4B11BOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C
Series
EconoDUAL™ 3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Half Bridge
Power - Max
20mW
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
600A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 600A
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$256.106868
$256.106868
10
$247.685559
$2476.85559
25
$245.963812
$6149.0953
50
$244.254034
$12212.7017
100
$239.230200
$23923.02
500
$222.126462
$111063.231
IFF600B12ME4B11BOSA1 Product Details
IFF600B12ME4B11BOSA1 Description
IFF600B12ME4B11BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. IFF600B12ME4B11BOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 600A. The IFF600B12ME4B11BOSA1 has 3 pins and it is available in Module packaging way. IFF600B12ME4B11BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
IFF600B12ME4B11BOSA1 Features
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
Voltage - Collector Emitter Breakdown (Max): 1200V