IFS200B12N3E4B31BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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IFS200B12N3E4B31BPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
41
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X41
Number of Elements
6
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
940W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
400A
Turn On Time
185 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 200A
Turn Off Time-Nom (toff)
528 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
14nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$255.01600
$2550.16
IFS200B12N3E4B31BPSA1 Product Details
IFS200B12N3E4B31BPSA1 Description
IFS200B12N3E4B31BPSA1 is a 1200v MIPAQ?base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC/shunt. The Infineon IFS200B12N3E4B31BPSA1 can be applied in motor drives, and servo drives applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IFS200B12N3E4B31BPSA1 is in the Tray package with 940W Power dissipation.