IFS75B12N3E4B31BOSA1

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IFS75B12N3E4B31BOSA1

Manufacturer part number:IFS75B12N3E4B31BOSA1

Manufacturer:Infineon Technologies

Description:IFS75B12N3E4B31BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IFS75B12N3E4B31BOSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Base
Mounting Type	Chassis Mount
Package / Case	Module
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C
Published	2002
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	34
ECCN Code	EAR99
Additional Feature	UL RECOGNIZED
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XUFM-X34
Number of Elements	6
Configuration	Full Bridge
Case Connection	ISOLATED
Power - Max	385W
Transistor Application	POWER CONTROL
Halogen Free	Not Halogen Free
Polarity/Channel Type	N-CHANNEL
Input	Standard
Current - Collector Cutoff (Max)	1mA
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	150A
Turn On Time	185 ns
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 75A
Turn Off Time-Nom (toff)	570 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	4.3nF @ 25V
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead