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IGLD60R190D1AUMA1

IGLD60R190D1AUMA1

IGLD60R190D1AUMA1

Infineon Technologies

IGLD60R190D1: 600 V 10 A CoolGaN? Enhancement-Mode Power Transistor - LSON-8

SOT-23

IGLD60R190D1AUMA1 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 8-LDFN Exposed Pad
Operating Temperature-55°C~150°C TJ
Series CoolGaN™
Part StatusActive
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 62.5W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 1.6V @ 960μA
Input Capacitance (Ciss) (Max) @ Vds 157pF @ 400V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) -10V
In-Stock:2519 items

About IGLD60R190D1AUMA1

The IGLD60R190D1AUMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGLD60R190D1: 600 V 10 A CoolGaN? Enhancement-Mode Power Transistor - LSON-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IGLD60R190D1AUMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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