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IGLD60R190D1AUMA1

IGLD60R190D1AUMA1

IGLD60R190D1AUMA1

Infineon Technologies

IGLD60R190D1: 600 V 10 A CoolGaN? Enhancement-Mode Power Transistor - LSON-8

SOT-23

IGLD60R190D1AUMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 8-LDFN Exposed Pad
Operating Temperature -55°C~150°C TJ
Series CoolGaN™
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 62.5W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 1.6V @ 960μA
Input Capacitance (Ciss) (Max) @ Vds 157pF @ 400V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) -10V

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