IP2002 Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout, yielding one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.

IP2002 Features

100% Tested for High-Voltage Breakdown

Rated 1500 Vrms

High IMR: 140 dB at 60 Hz

Maximum Nonlinearity: 0.010%

Bipolar Operation: VO = ?à10 V

Packages: PDIP-16 and SOIC-28

Ease of Use: Fixed Unity Gain Configuration

Supply Range: ?à4.5-V to ?à18-V

IP2002 Applications

Switching applications