IPB60R099CPAATMA1

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Manufacturer part number:IPB60R099CPAATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 600V 31A TO263-3

Case Package:SOT-23

Datasheet:IPB60R099CPAATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	255W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	255W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	105m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.2mA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2800pF @ 100V
Current - Continuous Drain (Id) @ 25°C	31A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	31A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Avalanche Energy Rating (Eas)	800 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead