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IPB65R095C7ATMA1

IPB65R095C7ATMA1

IPB65R095C7ATMA1

Infineon Technologies

MOSFET N-CH TO263-3

SOT-23

IPB65R095C7ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ C7
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 128W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id 4V @ 590μA
Input Capacitance (Ciss) (Max) @ Vds 2140pF @ 400V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $3.17605 $3.17605

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