IPD65R250E6XTMA1

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Manufacturer part number:IPD65R250E6XTMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252

Case Package:SOT-23

Datasheet:IPD65R250E6XTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ E6
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	208W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	208W
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 400μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 1000V
Current - Continuous Drain (Id) @ 25°C	16.1A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	76 ns
Continuous Drain Current (ID)	16.1A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.25Ohm
Drain to Source Breakdown Voltage	700V
Pulsed Drain Current-Max (IDM)	46A
Avalanche Energy Rating (Eas)	290 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free