IPD800N06NGBTMA1

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Manufacturer part number:IPD800N06NGBTMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) TO-252

Case Package:SOT-23

Datasheet:IPD800N06NGBTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	OptiMOS™
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	47W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	47W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 16μA
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 30V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Rise Time	38ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	16A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.08Ohm
Pulsed Drain Current-Max (IDM)	64A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	43 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant