IPG20N06S4L26ATMA1

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IPG20N06S4L26ATMA1

Manufacturer part number:IPG20N06S4L26ATMA1

Manufacturer:Infineon Technologies

Description:IPG20N06S4L26ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPG20N06S4L26ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Published	2010
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	33W
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	5 ns
Power - Max	33W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	26m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	2.2V @ 10μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1430pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	1.5ns
Fall Time (Typ)	10 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.026Ohm
Avalanche Energy Rating (Eas)	35 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead