IPG20N10S4L22ATMA1 Description

Modern HEXFET? Power MOSFET Silicon technology and cutting-edge DirectFETTM packaging are combined in the IPG20N10S4L22ATMA1. The DirectFET package is compatible with the layout geometries currently used in power applications, PCB assembly machinery, and vapor phase, infrared, or convection soldering techniques when application note AN-1035 outlining the manufacturing procedures and methods is followed. The two-sided cooling of the DirectFET package boosts heat transmission in power systems while reducing thermal resistance by 80% when compared to the previous-best.

IPG20N10S4L22ATMA1 Features

? Logic Level - Enhancement mode for dual N-channels

? AEC Q101 certification

? MSL1 peak reflow up to 260 ??C

? Operating temperature of 175 ??C

? Eco-Friendly Goods (RoHS compliant)

? Complete avalanche testing

IPG20N10S4L22ATMA1 Applications

Switching applications