Name: IPI020N06NAKSA1
Brand: Infineon Technologies
SKU: IPI020N06NAKSA1
Availability: InStock

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IPI020N06NAKSA1

Manufacturer part number:IPI020N06NAKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 29A TO262-3

Case Package:SOT-23

Datasheet:IPI020N06NAKSA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Bulk
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3W Ta 214W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	214W
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	2.8V @ 143μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	7800pF @ 30V
Current - Continuous Drain (Id) @ 25°C	29A Ta 120A Tc
Gate Charge (Qg) (Max) @ Vgs	106nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	51 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain Current-Max (Abs) (ID)	29A
Drain-source On Resistance-Max	0.002Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	480A
Avalanche Energy Rating (Eas)	420 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

About IPI020N06NAKSA1

The IPI020N06NAKSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 29A TO262-3.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPI020N06NAKSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.