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IPI020N06NAKSA1

IPI020N06NAKSA1

IPI020N06NAKSA1

Infineon Technologies

MOSFET N-CH 60V 29A TO262-3

SOT-23

IPI020N06NAKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 214W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 214W
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.8V @ 143μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 30V
Current - Continuous Drain (Id) @ 25°C 29A Ta 120A Tc
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 29A
Drain-source On Resistance-Max 0.002Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 420 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $2.86846 $1434.23

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