IPI020N06NAKSA1

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IPI020N06NAKSA1

Manufacturer part number:IPI020N06NAKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 29A TO262-3

Case Package:SOT-23

Datasheet:IPI020N06NAKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Bulk
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3W Ta 214W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	214W
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	2.8V @ 143μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	7800pF @ 30V
Current - Continuous Drain (Id) @ 25°C	29A Ta 120A Tc
Gate Charge (Qg) (Max) @ Vgs	106nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	51 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain Current-Max (Abs) (ID)	29A
Drain-source On Resistance-Max	0.002Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	480A
Avalanche Energy Rating (Eas)	420 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead