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IPI100P03P3L-04

IPI100P03P3L-04

IPI100P03P3L-04

Infineon Technologies

MOSFET P-CH 30V 100A TO262-3

SOT-23

IPI100P03P3L-04 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 4mOhm
Technology MOSFET (Metal Oxide)
Pin Count 3
Power Dissipation-Max 200W Tc
Element Configuration Single
Power Dissipation 200W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.1V @ 475μA
Input Capacitance (Ciss) (Max) @ Vds 9300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 45ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +5V, -16V
Fall Time (Typ) 180 ns
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 5V
Drain to Source Breakdown Voltage -30V
RoHS Status RoHS Compliant

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