IPI65R660CFDXKSA1

new-10%

Manufacturer part number:IPI65R660CFDXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 6A TO262

Case Package:SOT-23

Datasheet:IPI65R660CFDXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	62.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	63W
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	660m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 200μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	615pF @ 100V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.66Ohm
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	17A
Avalanche Energy Rating (Eas)	115 mJ
RoHS Status	RoHS Compliant