Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IPN50R3K0CEATMA1

IPN50R3K0CEATMA1

IPN50R3K0CEATMA1

Infineon Technologies

N-Channel Tape & Reel (TR) 3 Ω @ 400mA, 13V ±20V 84pF @ 100V 4.3nC @ 10V 500V SOT-223-3

SOT-23

IPN50R3K0CEATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case SOT-223-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ CE
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 400mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 84pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Continuous Drain Current (ID) 2.6A
Threshold Voltage 3V
Drain-source On Resistance-Max 3Ohm
DS Breakdown Voltage-Min 500V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
IPN50R3K0CEATMA1 Product Details

IPN50R3K0CEATMA1 Description


CoolMOS? is are volutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies.CoolMOS?CE is a price-performance optimized platform enabling to target cost-sensitive Applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits so fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.



IPN50R3K0CEATMA1 Features


  • Extremely low losses due to very low FOM Rdson*Qg and Eoss

  • Very high commutation ruggedness

  • Easy to use/drive

  • Pb-free plating,Halogen free mold compound

  • Qualified for standard grade applications



IPN50R3K0CEATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News