IPP023NE7N3 G Description

The IPP023NE7N3 G is an N-channel Power MOSFET with OptiMOS? technology specializing in synchronous rectification applications. Based on the leading 80V technology these 75V products feature the lowest ON-state resistance and superior switching performance simultaneously. The operating and storage temperature is between -55 and +175??. The Infineon IPP023NE7N3 G is in the TO-220-3 package with 300w.

IPP023NE7N3G Features

• World's lowest RDS (ON)

• Very low Qg and Qgd

• Excellent gate charge x RDS (ON) product (FOM)

• MSL1 rated

• Increased efficiency

• Highest power density

• Less paralleling required

• Smallest board-space consumption

• Easy-to-design products

• Ideal for high-frequency switching and DC-to-DC converters

• Normal level

• 100% avalanche tested

• Qualified according to JEDEC for target applications

• Green device

IPP023NE7N3G Applications

• Synchronous rectification for AC-DC SMPS

• Motor control for 12¨C48V systems (i.e. fans for servers, domestic vehicles, power tools, trucks)

• Isolated DC-DC converters (telecom and datacom systems)

• Or-ing switches and circuit breakers in 48V systems

• Class D audio amplifiers