IPP057N08N3GHKSA1

new-10%

Manufacturer part number:IPP057N08N3GHKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 80V 80A 3-Pin(3+Tab) TO-220

Case Package:SOT-23

Datasheet:IPP057N08N3GHKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	150W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	3.5V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds	4750pF @ 40V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	69nC @ 10V
Rise Time	66ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0057Ohm
Drain to Source Breakdown Voltage	80V
Pulsed Drain Current-Max (IDM)	320A
RoHS Status	RoHS Compliant