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IPP16CN10NGHKSA1

IPP16CN10NGHKSA1

IPP16CN10NGHKSA1

Infineon Technologies

Trans MOSFET N-CH 100V 53A 3-Pin(3+Tab) TO-220

SOT-23

IPP16CN10NGHKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series OptiMOS™
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 100W Tc
Power Dissipation 100W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16.5mOhm @ 53A, 10V
Vgs(th) (Max) @ Id 4V @ 61μA
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 50V
Current - Continuous Drain (Id) @ 25°C 53A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 53A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 3.22nF
Rds On Max 16.5 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $0.97186 $485.93

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