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IPP200N15N3GHKSA1

IPP200N15N3GHKSA1

IPP200N15N3GHKSA1

Infineon Technologies

Trans MOSFET N-CH 150V 50A 3-Pin(3+Tab) TO-220

SOT-23

IPP200N15N3GHKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150W Tc
Power Dissipation 150W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 75V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.82nF
Rds On Max 20 mΩ
RoHS Status RoHS Compliant

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