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IPP60R280P7XKSA1

IPP60R280P7XKSA1

IPP60R280P7XKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 280m Ω @ 3.8A, 10V ±20V 761pF @ 400V 18nC @ 10V 600V TO-220-3

SOT-23

IPP60R280P7XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ P7
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 53W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 190μA
Input Capacitance (Ciss) (Max) @ Vds 761pF @ 400V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.28Ohm
Pulsed Drain Current-Max (IDM) 36A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 38 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.42000 $2.42
10 $2.19700 $21.97
100 $1.79030 $179.03
500 $1.42086 $710.43
1,000 $1.19916 $1.19916
IPP60R280P7XKSA1 Product Details

IPP60R280P7XKSA1 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 38 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 761pF @ 400V.A maximum pulsed drain current of 36A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IPP60R280P7XKSA1 Features


the avalanche energy rating (Eas) is 38 mJ
based on its rated peak drain current 36A.
a 600V drain to source voltage (Vdss)


IPP60R280P7XKSA1 Applications


There are a lot of Infineon Technologies
IPP60R280P7XKSA1 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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