IPS110N12N3GBKMA1

new-10%

Manufacturer part number:IPS110N12N3GBKMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 120V 75A TO251-3

Case Package:SOT-23

Datasheet:IPS110N12N3GBKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	136W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 83μA
Halogen Free	Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	4310pF @ 60V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	75A
Max Dual Supply Voltage	120V
Drain-source On Resistance-Max	0.011Ohm
Avalanche Energy Rating (Eas)	120 mJ
RoHS Status	RoHS Compliant
Lead Free	Contains Lead